| PART |
Description |
Maker |
| MX27L512PC-15 MX27L512TI-20 MX27L512TI-12 MX27L512 |
512K-BIT [64K x 8] CMOS EPROM 64K X 8 OTPROM, 120 ns, PDIP28
|
Macronix International Co., Ltd.
|
| CAT28C512HI-12 CAT28C512GI-12 CAT28C512GI12 CAT28C |
512 kb CMOS Parallel EEPROM 64K X 8 EEPROM 5V, 120 ns, PDSO32
512 kb CMOS Parallel EEPROM 64K X 8 EEPROM 5V, 120 ns, PQCC32
64K X 8 EEPROM 5V, 150 ns, PDSO32
|
ON Semiconductor
|
| AM27C512-120EC |
64K X 8 OTPROM, 120 ns, PDSO32
|
ADVANCED MICRO DEVICES INC
|
| MCM6665A |
64K DRAM
|
Motorola
|
| D8203 |
64K DRAM Controller
|
Intel
|
| AT27I512R-45TI AT27I512R-12RI AT27I512R-90TI AT27I |
64K X 8 OTPROM, 45 ns, PDSO28
64K X 8 OTPROM, 120 ns, PDSO28
64K X 8 OTPROM, 90 ns, PDSO28
64K X 8 OTPROM, 55 ns, PQCC32
|
ATMEL CORP
|
| M10B11664A M10B11664A-35J |
64K X 16 DRAM FAST PAGE MODE
|
ETC
N.A.
|
| M10B11664A-45T M10B11664A M10B11664A-25J M10B11664 |
64K X 16 DRAM FAST PAGE MODE 64K的16的DRAM快速页面模
N/A
|
Electronic Theatre Controls, Inc.
N/A
Elite Memory Technology, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| NTE2164 NTE-DRAM NTE4164 NTE2102 NTE2128 NTE2117 N |
NMOS / 64k DRAM
MICROPROCESSOR & MEMORY CIRCUITS
|
NTE Electronics
|
| KM424C64-10 KM424C64-12 KM424C64Z KM424C64 |
64K X 4 Bit CMOS VIDEO RAM
|
Samsung Electronic
Samsung semiconductor
|
| GS820H32AQ-138I GS820H32AQ-6I GS820H32AQ-4I GS820H |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9.7 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
